Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

Direct detection of spontaneous polarization in wurtzite GaAs nanowires

Phase Transformation in Radially Merged Wurtzite GaAs Nanowires

III-V Nanowires (NWs) grown with metal-organic chemical vapor deposition commonly show a polytypic crystal structure, allowing growth of structures not found in the bulk counterpart. In this paper we studied the radial overgrowth of pure wurtzite (WZ) GaAs nanowires and characterized the samples with high resolution X-ray diffraction (XRD) to reveal the crystal structure of the grown material. ...

Spatial mapping of exciton lifetimes in single ZnO nanowires

A core/shell mechanism for stacking-fault generation in GaAs nanowires

Generation of stacking faults (SFs) during the growth of nanowires (NWs) is a major concern for the efficiency of NW-based devices such as solar cells. Here, molecular-dynamics simulation of a [111]-oriented gallium arsenide NW reveals an atomistic mechanism of SF generation. Spatial distribution of the adatom energy on the (111)B top surface exhibits a core/shell structure due to the contracti...